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AIKQ200N75CP2
  • AIKQ200N75CP2

AIKQ200N75CP2

Active and preferred

The automotive AIKQ200N75CP2 is a high-performance IGBT with 750V EDT technology, enabling efficient cooling and battery voltages up to 470V. Its tight parameter distribution and positive thermal coefficient allow easy paralleling for flexible and scalable power systems. With 200A current, it's the best in class IGBT in TO247PLUS package, reducing device count, increasing power density, and lowering costs.

Infineon Technologies AIKQ200N75CP2 Product Info

16 April 2026 0

Parameters

Co-pack diode technology

EMCON3

Eon

15.3 mJ

IC (@ 25°) max

200 A

IC (@ 100°) max

200 A

ICpuls max

600 A

IF max

200 A

IFpuls max

600 A

Irrm

41 A

Launch year

2022

Package

TO-247-3

Planned to be available until at least

2033

Ptot max

1071 W

QGate

1256 nC

Qrr

4700 nC

Reflow Solderable

No

Switching Frequency

7kHz - 15kHz

td(off)

266 ns

td(on)

89 ns

Technology

EDT2

tf

46 ns

tr

120 ns

Type

IGBT + Diode

VCE(sat)

1.3 V

VCE max

750 V

VF

1.8 V

Voltage Class max

750 V

Apps

EV traction inverter, Consumer electronics

Features

  • VCE = 750 V
  • 750 V collector-emitter blocking voltage
  • Smooth switching characteristics
  • Low VCE(sat), 1.30 V at ICnom = 200 A
  • Short circuit robust
  • Very tight parameter distribution
  • Fast soft rec Emitter Controlled 3 diode
  • Qualified according to AEC-Q101
  • Increase OV margin in application
  • Reduction of # of paralleled devices req
  • Simple gate drive design

Description

  • Benchmark qual & switching perf 470V Vdc
  • High CreepDist fills ATV V reqs 470V Vdc
  • Extremely robust fulfilling mission reqs
  • High switch freq -> less switch losses
  • Paralleling->=prod for diff power class

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