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IPB70N12S3-11
  • IPB70N12S3-11

IPB70N12S3-11

Infineon Technologies IPB70N12S3-11 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.83

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

70 A

IDpuls max

280 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-3)

Polarity

N

Ptot max

125 W

QG (typ @10V) max

65 nC

QG (typ @10V)

51 nC

Qualification

Automotive

RDS (on) (@10V) max

11.3 mΩ

RthJC max

1.2 K/W

Technology

OptiMOS™T

VDS max

120 V

VGS(th) min

2 V

VGS(th)

3 V

VGS(th) max

4 V

Features

  • OptiMOS™ power MOSFET for automotive
  • N-channel-Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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