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2ED2103S06F
  • 2ED2103S06F

2ED2103S06F

Active and preferred

650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFET s and IGBT s.Based on our SOI-technology , the 2ED2103S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.

Infineon Technologies 2ED2103S06F Product Info

16 April 2026 0

Parameters

Channels

2

Configuration

Half-Bridge

Input Vcc range

10 V to 20 V

Isolation Type

Functional levelshift SOI (Silicon On Insulator)

Output Current (Source)

0.29 A

Output Current (Sink)

0.7 A

Package

PG-DSO-8

Product Name

2ED2103S06F

Qualification

Industrial

Turn Off Propagation Delay

90 ns

Turn On Propagation Delay

90 ns

VBS UVLO (On)

8.9 V

VBS UVLO (Off)

8 V

VCC UVLO (Off)

8 V

VCC UVLO (On)

8.9 V

Voltage Class

650 V

Apps

LED lighting system design, Robotics, Home and building automation, Power conversion

Features

  • Op. voltages (VS node) < + 650 V
  • Neg. VS transient immunity of 100 V
  • Integr. ultra-fast bootstrap diode
  • 90 ns propagation delay
  • Cross-conduction prevention logic
  • Internal 520 ns dead time
  • HIN, /LIN logic input
  • Floating channel for bootstrap op.
  • Independent UVLO for both channels
  • Logic op. up to –11 V on VS Pin
  • Neg. voltage tol. on inputs of –5 V
  • Maximum supply voltage of 25 V

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