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1EDI60N12AF
  • 1EDI60N12AF

1EDI60N12AF

Active and preferred

EiceDRIVER™ Compact 1200 V single-channel isolated gate driver with 9.4/10 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance for MOSFETs .1EDI60N12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). 1EDI60IN12AF offers separate sink and source output, 40 ns input filter, accurate and stable timing. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

Infineon Technologies 1EDI60N12AF Product Info

16 April 2026 0

Parameters

Channels

1

Configuration

High-side

Input Vcc range

3.1 V to 17 V

Isolation Type

Galvanic isolation - Functional

Output Current (Source)

10 A

Output Current (Sink)

9.4 A

PDout

400 mW

Product Name

1EDI60N12AF

Qualification

Industrial

RDSON_H(max)

1.4 Ω

RDSON_H(typ)

0.75 Ω

RDSON_L (max)

1.7 Ω

RDSON_L(typ)

0.75 Ω

RthJA

165 K/W

Turn Off Propagation Delay

125 ns

Turn On Propagation Delay

120 ns

VBS UVLO (Off)

8.5 V

VBS UVLO (On)

9.1 V

VCC UVLO (Off)

2.75 V

VCC UVLO (On)

2.85 V

Voltage Class

1200 V

Apps

Medium voltage IBC (48 V), EV charging, General purpose motor drive, Photovoltaic, Industrial robots, Uninterruptible power supplies (UPS)

Features

  • Compact single channel isolated
  • For 600 V, 650 V, 950 V MOSFETs
  • Galv. isolated coreless transformer
  • 10 A typ sink & source peak output
  • 40 V absolute max. output voltage
  • 120 ns propagation delay
  • High CMTI >100 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping
  • DSO-8 150 mil narrow-body package
  • UVLO protection with hysteresis

Description

  • Tailored for all 650 V CoolMOS™ C7, P6 and other super junction MOS transistors
  • High switching frequency applications as SMPS, up to 4 MHz
  • Integrated filters reduce the need of external filters
  • Suitable for operation at high ambient temperature and in fast switching applications
  • No need to adapt signal voltage levels between μController and driver
  • Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
  • Short-circuit clamping to limit the gate voltage during short circuit

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