Product
0
1EDI3035AS
  • 1EDI3035AS

1EDI3035AS

Active and preferred

The EiceDRIVER™ gate driver 1EDI3035AS is a high-voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection.

Infineon Technologies 1EDI3035AS Product Info

16 April 2026 0

Parameters

Channels

1

Configuration

High-side

Family

EiceDRIVER™ isolated gate driver ICs for EV

Input Vcc range

3 V to 5.5 V

Isolation Type

Galvanic isolation - Reinforced

Output Current (Sink)

20 A

Output Current (Source)

20 A

Package

PG-DSO-20

Qualification

Automotive

Turn Off Propagation Delay

60 ns

Turn On Propagation Delay

60 ns

Voltage Class

1200 V

Features

  • For SiC MOSFET of volt. class up to 1200
  • CMTI up to 150 V/ns
  • 8 kV peak reinforc. insulation (DIN VDE)
  • Integrated booster (up to 20 A peak)
  • Integrated active Miller clamp
  • 12 - bit ADC
  • Split outputs TON and TOFF
  • DESAT protection
  • Config. ext. soft turn-off functionality
  • Safety inputs on both side
  • ISO 26262 SEooC (saf. req. up to ASIL B)

Description

  • Pre-config. to drive latest SiC MOSFET
  • Safety doc. aids system safety design
  • Comprehensive safety features
  • Supports ASIL D on system level
  • AEC-Q100 qualified
  • Lean packaging (DSO-20)

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8