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HMC907A-DIE
  • HMC907A-DIE

HMC907A-DIE

PRODUCTION

GaAs pHEMT MMIC Power Amplifier, 0.2 - 22 GHz

Analog Devices HMC907A-DIE Product Info

10 February 2026 7

Features

  • High P1dB Output Power: +28 dBm
  • High Gain: 14 dB
  • High Output IP3: +41 dBm
  • Single Supply: +10V @ 350 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 2.92 x 1.35 x 0.1 mm

Part details & applications

The HMC907A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, 41 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.7 dB from DC to 12 GHz making the HMC907A ideal for EW, ECM, Radar and test equipment applications. The HMC907A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.

Applications

  • Test Instrumentation
  • Military & Space

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