ADRF5424

RECOMMENDED FOR NEW DESIGNS

Die on Carrier, Silicon SPDT Switch, 100 MHz to 60 GHz

Analog Devices ADRF5424 Product Info

10 February 2026 7

Features

Ultrawideband frequency range: 100 MHz to 60 GHz
Reflective design
Bond pads for wire bond and ribbon bond
Low insertion loss

1.0 dB typical up to 18 GHz
1.3 dB typical up to 44 GHz
1.5 dB typical up to 55 GHz

High input linearity

P1dB: 28 dBm typical
IP3: 50 dBm typical

High RF power handling

Through path: 27 dBm up to 40 GHz
Hot switching: 27 dBm up to 40 GHz

No low frequency spurious signals
RF settling time (50% V_CTRL to 0.1 dB of final RF output): 17 ns
14-pad, 2.571 mm x 2.471 mm, die on carrier [CHIP]

Part details & applications

The ADRF5424 is a reflective, single-pole double-throw (SPDT) switch manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized, connected to ground.

This device operates from 100 MHz to 60 GHz with better than 1.5 dB of insertion loss and 35 dB of isolation at 55 GHz. The ADRF5424 has an RF input power handling capability of 27 dBm up to 40 GHz for both the through path and hot switching.

The ADRF5424 draws a low current of 14 μA on the positive supply of +3.3 V and 120 μA on negative supply of −3.3 V. The device features complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5424 is designed to match a characteristic impedance of 50 Ω.

Applications

Test and instrumentation

Cellular infrastructure: 5G mmWave

Military radios, radars, and electronic counter measures (ECMs)

Microwave radios and very small aperture terminals (VSATs)

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