Analog Devices ADRF5160 Product Info

• Reflective, 50 Ω design
• Low insertion loss: 0.7 dB typical to 2.0 GHz
• High power handling at T_CASE = 105°C
  • Long term (>10 years) average
    • CW power: 43 dBm
    • Peak power: 49 dBm
    • LTE average power (8 dB PAR): 41 dBm
  • Single event (<10 sec) average
    • LTE average power (8 dB PAR): 44 dBm
• High linearity
  • P0.1dB: 47 dBm typical
  • IP3: 70 dBm typical
• ESD ratings
  • HBM: 4 kV, (Class 3A)
  • CDM: 1.25 kV
• Single positive supply: 5 V
• Positive control, CMOS/TTL compatible
• 32-lead, 5 mm × 5 mm LFCSP package

The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.

The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP.

Applications

• Wireless infrastructure
• Military and high reliability applications
• Test equipment
• Pin diode replacement