ADPA9007-2

RECOMMENDED FOR NEW DESIGNS

DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

Analog Devices ADPA9007-2 Product Info

10 February 2026 4

Features

Wideband, internally matched, RF power amplifier
DC-coupled input and output
Integrated RF power detector
Integrated temperature sensor

Gain: 13 dB typical at 8 GHz to 16 GHz
OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
P_SAT: 33.5 dBm typical at 8 GHz to 16 GHz
OIP3: 43.5 dBm typical at 8 GHz to 16 GHz

Part details & applications

The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.

The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (V_DD) of 15 V and has a 500 mA typical quiescent drain current (I_DQ), which is adjustable.

The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.

APPLICATIONS

Electronic warfare
Radar
Test and measurement equipment

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