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ADMV4420
  • ADMV4420
  • ADMV4420

ADMV4420

RECOMMENDED FOR NEW DESIGNS

K Band Downconverter with Integrated Fractional-N PLL and VCO

Analog Devices ADMV4420 Product Info

10 February 2026 4

Features

  • RF front end with integrated RF balun and LNA
  • Double balanced, active mixer with high dynamic range IF amplifier
  • Fractional-N synthesizer with low phase noise, multicore VCO
  • 5 V supply operation with integrated LDO regulators
  • Output P1dB: 7 dBm
  • Output IP3: 16 dBm
  • Conversion gain: 36 dB
  • Noise figure: 7 dB
  • RF input frequency range: 16.95 GHz to 22.05 GHz
  • Internal LO frequency range: 16.35 GHz to 21.15 GHz
  • IF frequency range: 900 MHz to 2500 MHz
  • Single-ended 50 Ω input impedance and 75 Ω IF output impedance
  • Programmable via 4-wire SPI
  • 32-lead, 5 mm × 5 mm LFCSP

Part details & applications

The ADMV4420 is a highly integrated, double balanced, active mixer with an integrated fractional-N synthesizer, ideally suited for next generation K band satellite communications.

The RF front end consists of an integrated RF balun and low noise amplifier (LNA) for an optimal, 7 dB, single-sideband noise figure while minimizing external components. Additionally, the high dynamic range IF output amplifier provides a nominal conversion gain of 36 dB.

An integrated low phase noise, fractional-N, phase-locked loop (PLL) with a multicore voltage controlled oscillator (VCO) and internal 2× multiplier generate the necessary on-chip LO signal for the double balanced mixer, eliminating the need for external frequency synthesis. The multicore VCO uses an internal autocalibration routine that allows the PLL to select the necessary settings and lock in approximately 400 μs.

The reference input to the PLL employs a differentially excited 50 MHz crystal oscillator. Alternatively, the reference input can be driven by an external, singled-ended, 50 MHz source. The phase frequency detector (PFD) comparison frequency of the PLL operates up to 50 MHz.

The ADMV4420 is fabricated on a silicon germanium (SiGe), bipolar complementary metal-oxide semiconductor (BiCMOS) process, and is available in a 32-lead, RoHS compliant, 5 mm × 5 mm LFCSP package with an exposed pad. The device is specified over the −40°C to +85°C temperature range on a 5 V power supply.

Applications

  • Satellite communication
  • Point to point microwave communication

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