Analog Devices Inc.
0
RECOMMENDED FOR NEW DESIGNS
The ADL5802 uses high linearity, double-balanced, active mixer cores with integrated LO buffer amplifiers to provide high dynamic range frequency conversion from 100 MHz to 6 GHz. The mixers benefit from a proprietary linearization architecture that provides enhanced input IP3 performance when subject to high input levels. A bias adjust feature allows the input linearity, SSB noise figure, and dc current to be optimized using a single control pin. The high input linearity allows the device to be used in demanding cellular applications where in-band blocking signals may otherwise result in degradation in dynamic performance. The balanced active mixer arrangement provides superb LO to RF and LO to IF leakage, typically better than −30 dBm.
The IF outputs are designed for a 200 Ω source impedance and provide a typical voltage conversion gain of 7.6 dB when loaded into a 200 Ω load.
The ADL5802 is fabricated using a SiGe high performance IC process. The device is available in a compact 4 mm × 4 mm, 24-lead LFCSP package and operates over a −40°C to +85°C temperature range. An evaluation board is also available.
APPLICATIONS
The ADL5802 uses high linearity, double-balanced, active mixer cores with integrated LO buffer amplifiers to provide high dynamic range frequency conversion from 100 MHz to 6 GHz. The mixers benefit from a proprietary linearization architecture that provides enhanced input IP3 performance when subject to high input levels. A bias adjust feature allows the input linearity, SSB noise figure, and dc current to be optimized using a single control pin. The high input linearity allows the device to be used in demanding cellular applications where in-band blocking signals may otherwise result in degradation in dynamic performance. The balanced active mixer arrangement provides superb LO to RF and LO to IF leakage, typically better than −30 dBm.
The IF outputs are designed for a 200 Ω source impedance and provide a typical voltage conversion gain of 7.6 dB when loaded into a 200 Ω load.
The ADL5802 is fabricated using a SiGe high performance IC process. The device is available in a compact 4 mm × 4 mm, 24-lead LFCSP package and operates over a −40°C to +85°C temperature range. An evaluation board is also available.
APPLICATIONS
Data Sheet, Rev 0, 11/2009
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