0
ACTIVE
Number of channels |
1 |
Power switch |
IGBT, MOSFET, SiCFET |
Peak output current (A) |
3 |
Input supply voltage (min) (V) |
8 |
Input supply voltage (max) (V) |
26 |
Features |
Short circuit protection, Soft turn-off, Split output |
Operating temperature range (°C) |
-40 to 125 |
Rise time (ns) |
8 |
Fall time (ns) |
14 |
Channel input logic |
Non-Inverting |
Rating |
Automotive |
Undervoltage lockout (typ) (V) |
8 |
Driver configuration |
Single |
SOIC (D)-8-29.4 mm² 4.9 x 6
The UCC5713x-Q1 is a single channel, high-performance, low-side gate driver capable of effectively driving MOSFET, IGBT and SiC power switches. The UCC5713x-Q1 has a typical peak drive strength of 3A.
The UCC5713x-Q1 provide the over current protection with the OCP pin. When the over current signal detected on the OCP pin, the internal circuit will pull down the EN/FLT pin to report fault and force the OUT to low stage. Externall pull up circuir on the EN/FLT is required during the normal operation of the driver. Pulling the EN/FLT low will disable the driver. The EN/FLT would also report the under voltage lock out (UVLO) fault on VDD and the over temperature fault. The UCC5713x-Q1 provide both 8V and 12V UVLO option for SiC and IGBT applications.