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PREVIEW
Number of channels |
1 |
Isolation rating |
Reinforced |
Power switch |
IGBT, SiCFET |
Withstand isolation voltage (VISO) (Vrms) |
5000 |
Working isolation voltage (VIOWM) (Vrms) |
1063 |
Transient isolation voltage (VIOTM) (VPK) |
7071 |
Peak output current (A) |
15 |
Peak output current (source) (typ) (A) |
15 |
Peak output current (sink) (typ) (A) |
15 |
Features |
AEC-Q100 Automotive Qual, High CMTI, High-side driver, Integrated protections: UVLO, Isolated, Overcurrent protection, Under voltage lock out, Voltage monitoring |
Output VCC/VDD (min) (V) |
13 |
Output VCC/VDD (max) (V) |
30 |
Input supply voltage (min) (V) |
-0.3 |
Input supply voltage (max) (V) |
5.5 |
Propagation delay time (µs) |
0.09 |
Operating temperature range (°C) |
-40 to 150 |
Rating |
Automotive |
Undervoltage lockout (typ) (V) |
12 |
TI functional safety category |
Functional Safety Quality-Managed |
SSOP (DFP)-20-58.195 mm² 5.65 x 10.3
The UCC218200-Q1 is a galvanically isolated single-channel gate driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218200-Q1 has up to ±15A peak source and sink current.
The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common-mode noise immunity (CMTI).
The UCC218200-Q1 includes state-of-art protection features such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness, active short circuit inputs on both the primary and secondary sides, output voltage gate monitoring, and built-in self test during startup.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
