Product
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UCC21750
  • UCC21750
  • UCC21750

UCC21750

ACTIVE

5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs

Texas Instruments UCC21750 Product Info

1 April 2026 0

Parameters

Number of channels

1

Isolation rating

Reinforced

Power switch

IGBT, SiCFET

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

1500

Transient isolation voltage (VIOTM) (VPK)

8000, 8400

Peak output current (A)

10

Peak output current (source) (typ) (A)

10

Peak output current (sink) (typ) (A)

10

Features

Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off

Output VCC/VDD (min) (V)

13

Output VCC/VDD (max) (V)

33

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.09

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Catalog

Bootstrap supply voltage (max) (V)

2121

Rise time (ns)

33

Fall time (ns)

27

Undervoltage lockout (typ) (V)

12

Package

SOIC (DW)-16-106.09 mm² 10.3 x 10.3

Features

  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program

Description

The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

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