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UCC21530
  • UCC21530
  • UCC21530

UCC21530

ACTIVE

5.7kVrms, 4A/6A dual-channel isolated gate driver with EN & DT pins in DWK pkg for IGBT/SiC F

Texas Instruments UCC21530 Product Info

1 April 2026 3

Parameters

Number of channels

2

Isolation rating

Reinforced

Power switch

IGBT, MOSFET, SiCFET

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

700

Transient isolation voltage (VIOTM) (VPK)

8000

Peak output current (A)

6

Peak output current (source) (typ) (A)

4

Peak output current (sink) (typ) (A)

6

Features

Enable, Programmable dead time

Output VCC/VDD (min) (V)

14.7

Output VCC/VDD (max) (V)

25

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

18

Propagation delay time (µs)

0.019

Input threshold

CMOS, TTL

Operating temperature range (°C)

-40 to 125

Rating

Catalog

Bootstrap supply voltage (max) (V)

2121

Rise time (ns)

6

Fall time (ns)

7

Undervoltage lockout (typ) (V)

12

Package

SOIC (DWK)-14-106.09 mm² 10.3 x 10.3

Features

  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C
  • Safety-related certifications (planned):
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CQC certification per GB4943.1-2022
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C
  • Safety-related certifications (planned):
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CQC certification per GB4943.1-2022

Description

The UCC21530 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

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