0
Architecture |
FET / CMOS Input, Voltage FB |
Number of channels |
4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) |
2.5 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) |
5.5 |
GBW (typ) (MHz) |
100 |
BW at Acl (MHz) |
200 |
Acl, min spec gain (V/V) |
1 |
Slew rate (typ) (V/µs) |
150 |
Vn at flatband (typ) (nV√Hz) |
7.5 |
Vn at 1 kHz (typ) (nV√Hz) |
7.5 |
Iq per channel (typ) (mA) |
5.2 |
Vos (offset voltage at 25°C) (max) (mV) |
10 |
Rail-to-rail |
In, Out |
Features |
EMI Hardened |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 125 |
CMRR (typ) (dB) |
80 |
Input bias current (max) (pA) |
20 |
Offset drift (typ) (µV/°C) |
4.5 |
Iout (typ) (mA) |
100 |
2nd harmonic (dBc) |
-75 |
3rd harmonic (dBc) |
-83 |
Frequency of harmonic distortion measurement (MHz) |
1 |
SOIC (D)-14-51.9 mm² 8.65 x 6