0
ACTIVE
Number of channels |
4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) |
40 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) |
4.5 |
Rail-to-rail |
In to V+ |
GBW (typ) (MHz) |
5.25 |
Slew rate (typ) (V/µs) |
20 |
Vos (offset voltage at 25°C) (max) (mV) |
4 |
Iq per channel (typ) (mA) |
0.9375 |
Vn at 1 kHz (typ) (nV√Hz) |
37 |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 125 |
Offset drift (typ) (µV/°C) |
2 |
Features |
Cost Optimized, EMI Hardened, Small Size, Standard Amps |
Input bias current (max) (pA) |
120 |
CMRR (typ) (dB) |
105 |
Iout (typ) (A) |
0.026 |
Architecture |
CMOS |
Input common mode headroom (to negative supply) (typ) (V) |
1.5 |
Input common mode headroom (to positive supply) (typ) (V) |
0 |
Output swing headroom (to negative supply) (typ) (V) |
0.105 |
Output swing headroom (to positive supply) (typ) (V) |
-0.115 |
SOIC (D)-14-51.9 mm² 8.65 x 6
The TL08xH (TL081H, TL082H, and TL084H) family of devices are the next-generation versions of the industry-standard TL08x (TL081, TL082, and TL084) devices. These devices provide outstanding value for cost-sensitive applications, with features including low offset (1mV, typical), high slew rate (20V/µs), and common-mode input to the positive supply. High ESD (1.5kV, HBM), integrated EMI and RF filters, and operation across the full –40°C to 125°C enable the TL08xH devices to be used in the most rugged and demanding applications.