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SN74CB3Q3125
  • SN74CB3Q3125
  • SN74CB3Q3125
  • SN74CB3Q3125
  • SN74CB3Q3125
  • SN74CB3Q3125

SN74CB3Q3125

ACTIVE

3.3-V, 1:1 (SPST), 4-channel FET bus switch

Texas Instruments SN74CB3Q3125 Product Info

1 April 2026 0

Parameters

Protocols

Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART

Configuration

1:1 SPST

Number of channels

4

Bandwidth (MHz)

500

Supply voltage (max) (V)

3.6

Ron (typ) (mΩ)

4000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

2000

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

4

CON (typ) (pF)

8

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

Turnoff time (disable) (max) (ns)

5.3

Turnon time (enable) (max) (ns)

6.6

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

Package

SSOP (DBQ)-16-29.4 mm² 4.9 x 6

Features

  • High-bandwidth data path (up to 500MHz)
  • 5V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0V to 5V switching with 3.3V VCC
    • 0V to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (fOE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.3mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0V to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL, 5V, or 3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000V Human-Body Model (A114-B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating.
  • For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application note CBT-C, CB3T, and CB3Q Signal-Switch Families.
  • High-bandwidth data path (up to 500MHz)
  • 5V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0V to 5V switching with 3.3V VCC
    • 0V to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (fOE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.3mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0V to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL, 5V, or 3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000V Human-Body Model (A114-B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating.
  • For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application note CBT-C, CB3T, and CB3Q Signal-Switch Families.

Description

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

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