0
Number of channels |
2 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) |
5.5 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) |
1.8 |
Vos (offset voltage at 25°C) (max) (mV) |
0.15 |
Offset drift (typ) (µV/°C) |
1.5 |
Input bias current (max) (pA) |
0.9 |
GBW (typ) (MHz) |
20 |
Features |
EMI Hardened, Shutdown, Small Size, Zero Crossover |
Slew rate (typ) (V/µs) |
10 |
Rail-to-rail |
In, Out |
Iq per channel (typ) (mA) |
1.5 |
Vn at 1 kHz (typ) (nV√Hz) |
8.5 |
CMRR (typ) (dB) |
114 |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 125 |
Iout (typ) (A) |
0.065 |
Architecture |
CMOS |
Input common mode headroom (to negative supply) (typ) (V) |
-0.1 |
Input common mode headroom (to positive supply) (typ) (V) |
0.1 |
Output swing headroom (to negative supply) (typ) (V) |
0.01 |
Output swing headroom (to positive supply) (typ) (V) |
-0.01 |
THD + N at 1 kHz (typ) (%) |
0.0005 |
SOIC (D)-8-29.4 mm² 4.9 x 6