Product
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INA950-SEP
  • INA950-SEP
  • INA950-SEP

INA950-SEP

ACTIVE

Space-enhanced-product, 2.7V to 80V, 1.1MHz, ultra-precise, current-sense amplifier

Texas Instruments INA950-SEP Product Info

1 April 2026 3

Parameters

Product type

Analog output

Common-mode voltage (max) (V)

80

Common-mode voltage (min) (V)

2.7

Input offset (±) (max) (µV)

25

Input offset drift (±) (typ) (µV/°C)

0.05

Features

High frequency, Ultra precise

Rating

Space

Voltage gain (V/V)

20

CMRR (min) (dB)

140

Bandwidth (kHz)

1100

Supply voltage (max) (V)

5.5

Supply voltage (min) (V)

2.7

Iq (max) (mA)

0.37

Number of channels

1

Comparators (#)

0

Gain error (%)

0.1

Gain error drift (±) (max) (ppm/°C)

5

Slew rate (V/µs)

2

Operating temperature range (°C)

-55 to 125

Package

TSSOP (PW)-8-19.2 mm² 3 x 6.4

Features

  • VID V62/25635
  • Radiation - Total Ionizing Dose (TID):
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 43MeV-cm2 /mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 47.5MeV-cm2 /mg
  • Space Enhanced Plastic
    • Operating temperature from –55°C to +125°C
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Outgassing test performed per ASTM E595
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Wide common-mode voltage:
    • Operational voltage: 2.7V to 80V
    • Survival voltage: −20V to 85V
  • Excellent CMRR:
    • 160dB DC
    • 85dB AC at 50kHz
  • Gain of 20V/V
    • Gain error: ±0.1% (maximum)
    • Gain drift: ±1.5ppm/°C
  • Offset voltage: ±12µV (maximum)
  • Offset drift: ±0.05µV/°C
  • High bandwidth: 1.1MHz
  • Slew rate: 2V/µs
  • Quiescent current: 370µA
  • VID V62/25635
  • Radiation - Total Ionizing Dose (TID):
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 43MeV-cm2 /mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 47.5MeV-cm2 /mg
  • Space Enhanced Plastic
    • Operating temperature from –55°C to +125°C
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Outgassing test performed per ASTM E595
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Wide common-mode voltage:
    • Operational voltage: 2.7V to 80V
    • Survival voltage: −20V to 85V
  • Excellent CMRR:
    • 160dB DC
    • 85dB AC at 50kHz
  • Gain of 20V/V
    • Gain error: ±0.1% (maximum)
    • Gain drift: ±1.5ppm/°C
  • Offset voltage: ±12µV (maximum)
  • Offset drift: ±0.05µV/°C
  • High bandwidth: 1.1MHz
  • Slew rate: 2V/µs
  • Quiescent current: 370µA

Description

The INA950-SEP is an ultra-precise, current-sense amplifier that can measure voltage drops across shunt resistors over a wide common-mode range from 2.7V to 80V. The ultra-precise current measurement accuracy is achieved thanks to the combination of an ultra-low offset voltage of ±12µV (maximum), a small gain error of ±0.1% (maximum), and a high DC CMRR of 160dB (typical). The INA950-SEP is not only designed for DC current measurement, but also for high-speed applications (such as fast overcurrent protection, for example) with a high bandwidth of 1.1MHz and an 85dB AC CMRR (at 50kHz).

The INA950-SEP provides the capability to make ultra-precise current measurements by sensing the voltage drop across a shunt resistor over a wide common- mode range from 2.7V to 80V. The INA950-SEP is available in the TSSOP-8 package.

The INA950-SEP operates from a single 2.7V to 5.5V supply while only drawing 370µA from the supply (typical). The low offset of the zero-drift architecture enables current sensing with low ohmic shunts as specified over the operating temperature range (−55°C to 125°C).

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