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CSD86311W1723
  • CSD86311W1723

CSD86311W1723

ACTIVE

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Texas Instruments CSD86311W1723 Product Info

1 April 2026 3

Parameters

VDS (V)

25

VGS (V)

10

Type

N-channel

Configuration

Dual Common Source

Rds(on) at VGS=4.5 V (max) (mΩ)

42

Rds(on) at VGS=2.5 V (max) (mΩ)

50

VGSTH typ (typ) (V)

1

QG (typ) (nC)

3.1

QGD (typ) (nC)

0.33

QGS (typ) (nC)

0.85

ID - silicon limited at TC=25°C (A)

4.5

ID - package limited (A)

4.5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZG)-12-3.9375 mm² 2.25 x 1.75

Features

  • Dual N-Ch MOSFETs
  • Common Source Configuration
  • Small Footprint 1.7 mm × 2.3 mm
  • Ultra Low Qg and Qgd
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • APPLICATIONS
    • Battery Management
    • Battery Protection
    • DC-DC Converters

  • Dual N-Ch MOSFETs
  • Common Source Configuration
  • Small Footprint 1.7 mm × 2.3 mm
  • Ultra Low Qg and Qgd
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • APPLICATIONS
    • Battery Management
    • Battery Protection
    • DC-DC Converters

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

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