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CSD25481F4
  • CSD25481F4

CSD25481F4

ACTIVE

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Texas Instruments CSD25481F4 Product Info

1 April 2026 5

Parameters

VDS (V)

-20

VGS (V)

-12

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

105

Rds(on) at VGS=2.5 V (max) (mΩ)

175

VGSTH typ (typ) (V)

-0.95

QG (typ) (nC)

0.913

QGD (typ) (nC)

0.153

QGS (typ) (nC)

0.24

ID - silicon limited at TC=25°C (A)

2.5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJC)-3-0.657225 mm² 1.035 x 0.635

Features

  • Ultra-low on resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 Case Size)
    • 1 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm max height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Ultra-low on resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 Case Size)
    • 1 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm max height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant

Description

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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