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CSD19538Q2
  • CSD19538Q2
  • CSD19538Q2
  • CSD19538Q2

CSD19538Q2

ACTIVE

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Texas Instruments CSD19538Q2 Product Info

1 April 2026 1

Parameters

VDS (V)

100

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

59

VGSTH typ (typ) (V)

3.2

QG (typ) (nC)

4.3

QGD (typ) (nC)

0.8

QGS (typ) (nC)

1.6

ID - silicon limited at TC=25°C (A)

13.1

ID - package limited (A)

14.4

Logic level

No

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

WSON (DQK)-6-4 mm² 2 x 2

Features

  • Ultra-low Qg and Qgd
  • Low-thermal resistance
  • Avalanche rated
  • Lead free
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package
  • Ultra-low Qg and Qgd
  • Low-thermal resistance
  • Avalanche rated
  • Lead free
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package

Description

This 100V, 49mΩ, SON 2mm × 2mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 100V, 49mΩ, SON 2mm × 2mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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