0
VDS (V) |
100 |
VGS (V) |
20 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=10 V (max) (mΩ) |
3.6 |
VGSTH typ (typ) (V) |
2.7 |
QG (typ) (nC) |
78 |
QGD (typ) (nC) |
13 |
QGS (typ) (nC) |
25 |
ID - silicon limited at TC=25°C (A) |
187 |
ID - package limited (A) |
150 |
Logic level |
No |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 175 |
TO-220 (KCS)-3-46.228 mm² 10.16 x 4.55
This 100V, 3.1mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.