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VN2222L
  • VN2222L

VN2222L

In Production

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Microchip Technology VN2222L Product Info

16 April 2026 0

Parameters

BVdss min (V)

60

Rds (on) max (Ohms)

7.5

CISSmax (pF)

60

Vgs(th) max (V)

2.5

Package

TO-92

Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain

Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

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