0
In Production
Capacitive Load Drive |
10,000 pF in 21 ns |
MOSFET Driver Type |
Low Side |
Supply Voltage Max V (volt) |
18 |
Peak Sink Current A (ampere) |
12 |
Peak Source Current A (ampere) |
12 |
Propagation Delay tD1 ns (nanosecond) |
44 |
Propagation Delay tD2 ns (nanosecond) |
44 |
Sink Resistance Ω (ohm) |
0.9 |
Source Resistance Ω (ohm) |
1 |
Fall Time tF ns (nanosecond) |
32 |
Rise Time tR ns (nanosecond) |
30 |
# of Outputs |
1 |
Output Type |
Non-inverting |
Integrated MOSFETs |
External |
Peak Low-Side Source Current (Ampere) |
13 |
Supply Voltage Min V (volt) |
4.5 |
Low-Side Source Resistance Typ (Ohms) Ω (ohm) |
1 |
Low-Side Sink Resistance Typ (Ohms) Ω (ohm) |
0.9 |
Low-Side Rise Time (ns) |
30 |
Low-Side Fall Time (ns) |
32 |
Low-Side Turn-On Prop Delay (ns) |
44 |
Low Side Turn-off Propagation delay (ns) |
44 |
Temp Range (T-Junction) Min °C (degrees Celsius) |
- |
Temp Range (T-Junction) Max °C (degrees Celsius) |
150 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
125 |
Qualification |
AEC-Q100 |
Output Configuration |
Low-Side |
The TC4451/52 are single-output MOSFET gate drivers, which are high-current buffer/gate drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBT). Their high drive current of over 13 A is capable of driving some of largest power transistors in use today. The TC4451/2 have matched leading and falling-edge propagation delay times and have very low cross-conduction current to minimize the overall power dissipation of the device. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, more than 1.5 A of reverse current (of either polarity) being forced back into their outputs. Additionally, all terminals are fully protected against up to 4 kV of electrostatic discharge.