0
In Production
Capacitive Load Drive |
4,700 pF in 15 ns |
MOSFET Driver Type |
Low Side |
Supply Voltage Max V (volt) |
18 |
Peak Sink Current A (ampere) |
9 |
Peak Source Current A (ampere) |
9 |
Propagation Delay tD1 ns (nanosecond) |
60 |
Propagation Delay tD2 ns (nanosecond) |
60 |
Sink Resistance Ω (ohm) |
0 |
Source Resistance Ω (ohm) |
0 |
Fall Time tF ns (nanosecond) |
26 |
Rise Time tR ns (nanosecond) |
28 |
# of Outputs |
1 |
Output Type |
Inverting |
Integrated MOSFETs |
External |
Peak Low-Side Source Current (Ampere) |
9 |
Supply Voltage Min V (volt) |
4.5 |
Low-Side Source Resistance Typ (Ohms) Ω (ohm) |
1.25 |
Low-Side Sink Resistance Typ (Ohms) Ω (ohm) |
0.8 |
Low-Side Rise Time (ns) |
28 |
Low-Side Fall Time (ns) |
26 |
Low-Side Turn-On Prop Delay (ns) |
38 |
Low Side Turn-off Propagation delay (ns) |
42 |
Temp Range (T-Junction) Min °C (degrees Celsius) |
- |
Temp Range (T-Junction) Max °C (degrees Celsius) |
150 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
125 |
Qualification |
AEC-Q100 |
Output Configuration |
Low-Side |
The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET gate drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device.
These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9 A MOSFET drivers fit into most any application where high gate/line capacitance drive is required