0
In Production
Capacitive Load Drive |
4,700 pF in 15 ns |
MOSFET Driver Type |
Low Side |
Supply Voltage Max V (volt) |
18 |
Peak Sink Current A (ampere) |
9 |
Peak Source Current A (ampere) |
9 |
Propagation Delay tD1 ns (nanosecond) |
50 |
Propagation Delay tD2 ns (nanosecond) |
53 |
Sink Resistance Ω (ohm) |
1.7 |
Source Resistance Ω (ohm) |
2.4 |
Fall Time tF ns (nanosecond) |
26 |
Rise Time tR ns (nanosecond) |
28 |
# of Outputs |
1 |
Output Type |
Inverting |
Integrated MOSFETs |
External |
Peak Low-Side Source Current (Ampere) |
9 |
Supply Voltage Min V (volt) |
4.5 |
Low-Side Source Resistance Typ (Ohms) Ω (ohm) |
1.4 |
Low-Side Sink Resistance Typ (Ohms) Ω (ohm) |
0.9 |
Low-Side Rise Time (ns) |
60 |
Low-Side Fall Time (ns) |
60 |
Low-Side Turn-On Prop Delay (ns) |
30 |
Low Side Turn-off Propagation delay (ns) |
33 |
Temp Range (T-Junction) Min °C (degrees Celsius) |
- |
Temp Range (T-Junction) Max °C (degrees Celsius) |
150 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
125 |
Output Configuration |
Low-Side |
The TC4421/4422 are high current buffer/gate drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.