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SST25VF512
  • SST25VF512

SST25VF512

In Production

SST25VF512 SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Microchip Technology SST25VF512 Product Info

16 April 2026 0

Parameters

Battery Backup

No

Bus Modes

SPI

Density

512 Kbit

Endurance

100,000

Max. Clock Freq.

20 MHz

Operating Voltage Max (V)

3.6

Operating Voltage Min (V)

2.7

Page Size (Bytes)

0

Write Protect Scheme

Quarter, Half, Whole Array

Write Protected

No

Data Retention

100

Features

    • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
    • Low Power Consumption: – Active Read Current: 7 mA (typical) – Standby Current: 8 µA (typical)
    • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks
    • Fast Erase and Byte-Program: – Chip-Erase Time: 70 ms (typical) – Sector- or Block-Erase Time: 18 ms (typical) – Byte-Program Time: 14 µs (typical)
    • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
    • Packages Available – 8-lead SOIC (4.9mm x 6mm) – 8-contact WSON
    • All non-Pb (lead-free) devices are RoHS compliant

Description

SST25VF512 SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

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