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SST25VF020
  • SST25VF020
  • SST25VF020

SST25VF020

In Production

The SST serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF020 SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Microchip Technology SST25VF020 Product Info

16 April 2026 0

Parameters

Density

2 Mbit

Operating Voltage Min (V)

2.7

Operating Voltage Max (V)

3.6

Max. Clock Freq.

20 MHz

Page Size (Bytes)

0

Write Protected

No

Write Protect Scheme

Quarter, Half, Whole Array

Endurance

100,000

Data Retention

100

Bus Modes

SPI

Battery Backup

No

Features

  • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
  • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
  • Low Power Consumption: – Active Read Current: 7 mA (typical) – Standby Current: 8 µA (typical)
  • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks
  • Fast Erase and Byte-Program: – Chip-Erase Time: 70 ms (typical) – Sector- or Block-Erase Time: 18 ms (typical) – Byte-Program Time: 14 µs (typical)
  • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
  • Packages Available – 8-lead SOIC 150 mil body width – 8-contact WSON (5mm x 6mm)
  • All non-Pb (lead-free) devices are RoHS compliant

Description

The SST serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF020 SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

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