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MSCSM70TLM05CAG
  • MSCSM70TLM05CAG

MSCSM70TLM05CAG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant

Microchip Technology MSCSM70TLM05CAG Product Info

16 April 2026 0

Parameters

Configuration

Three-level inverter

Current A (ampere)

369

Driver Type

SiC MOSFET

RDSon (mΩ) typ

3.8

Silicon Type

SiC MOSFET

VDSS (V)

700

Total Gate Charge (nC)

860

Rise Time tR ns (nanosecond)

125

Fall Time tF ns (nanosecond)

92

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • • Configuration: Three-level Inverter
  • • VDSS (V): 700
  • • RDSon (mR) typ: 3.8
  • • Current (A) Tc=80C: 369
  • • Silicon Type: SiC MOSFET
  • • Package Type: SP6C

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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