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MSCSM70TAM10TPAG
  • MSCSM70TAM10TPAG

MSCSM70TAM10TPAG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM70TAM10TPAG Product Info

16 April 2026 0

Parameters

Configuration

Triple Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

700

RDSon (mΩ) typ

7.5

Current A (ampere)

189

PKG

SP6P

Total Gate Charge (nC)

430

Rise Time tR ns (nanosecond)

40

Fall Time tF ns (nanosecond)

20

MaxOperatingJunctionTemp

175

Features

  • Configuration: Triple Phase Leg
  • VDSS (V): 700
  • RDSon (mR) typ: 7.5
  • Current (A) Tc=80°C: 189
  • Silicon Type: SiC MOSFET
  • Package Type: SP6P

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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