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MSCSM70HM05AG
  • MSCSM70HM05AG

MSCSM70HM05AG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM70HM05AG Product Info

16 April 2026 2

Parameters

Configuration

Full Bridge

Silicon Type

SiC MOSFET

VDSS (V)

700

Current A (ampere)

278

RDSon (mΩ) typ

5

Total Gate Charge (nC)

645

Rise Time tR ns (nanosecond)

125

Fall Time tF ns (nanosecond)

92

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • Configuration: Full Bridge
  • VDSS (V): 700
  • RDSon (mR) typ: 5
  • Current (A) Tc=80°C:278
  • Silicon Type: SiC MOSFET
  • Package Type: SP6C
  • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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