Product
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MSCSM70AM025T6AG
  • MSCSM70AM025T6AG

MSCSM70AM025T6AG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM70AM025T6AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

700

Current A (ampere)

548

RDSon (mΩ) typ

2.5

PKG

SP6C

Total Gate Charge (nC)

1290

Rise Time tR ns (nanosecond)

125

Fall Time tF ns (nanosecond)

92

MaxOperatingJunctionTemp

175

Features

  • Configuration: Phase Leg
  • VDSS (V): 700
  • RDSon (mR) typ: 2.5
  • Current (A) Tc=80°C: 548
  • Silicon Type: SiC MOSFET
  • Package Type: SP6C

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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