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MSCSM70AM025CD3AG
  • MSCSM70AM025CD3AG

MSCSM70AM025CD3AG

In Production

SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow stray inductanceInternal thermistor for temperature monitoring (optional)High efficiency converterOutstanding performance at high frequency operationStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

Microchip Technology MSCSM70AM025CD3AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

700

Current A (ampere)

538

PKG

D3

RDSon (mΩ) typ

2.5

Total Gate Charge (nC)

1290

Rise Time tR ns (nanosecond)

125

Fall Time tF ns (nanosecond)

92

MaxOperatingJunctionTemp

175

Features

  • Phase Leg
  • VDSS (V): 700
  • RDSon (mR) typ: 2.5
  • Current (A) Tc=80C: 538
  • Silicon Type: SiC MOSFET
  • Package: D3

    • Description

    • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
    • Kelvin source for easy drive
    • Low stray inductance
    • Internal thermistor for temperature monitoring (optional)
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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