0
In Production
Configuration |
Triple Phase Leg |
Silicon Type |
SiC MOSFET |
VDSS (V) |
1700 |
Current A (ampere) |
142 |
RDSon (mΩ) typ |
11.7 |
Total Gate Charge (nC) |
534 |
Rise Time tR ns (nanosecond) |
17 |
Fall Time tF ns (nanosecond) |
19 |
MaxOperatingJunctionTemp |
175 |
PKG |
SP6P |
• SiC Power MOSFET
• Kelvin source for easy drive
• Low stray inductance
• Internal thermistor for temperature monitoring
• High efficiency converter
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant