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MSCSM170HM087CAG
  • MSCSM170HM087CAG

MSCSM170HM087CAG

In Production

•   SiC Power MOSFET•   Kelvin source for easy drive•   Low stray inductance•   High efficiency converter•   Outstanding performance at high frequency operation•   Stable temperature behavior•   Direct mounting to heatsink (isolated package)•   Low junction to case thermal resistance•   RoHS Compliant

Microchip Technology MSCSM170HM087CAG Product Info

16 April 2026 0

Parameters

Configuration

Full Bridge

Silicon Type

SiC MOSFET

Driver Type

SiC MOSFET

VDSS (V)

1700

Current A (ampere)

189

RDSon (mΩ) typ

8.8

Total Gate Charge (nC)

712

Rise Time tR ns (nanosecond)

75

Fall Time tF ns (nanosecond)

56

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • Full Bridge
  • VDSS (V): 1700
  • RDSon (mR) typ: 8.8
  • Current (A) Tc=80C: 189
  • Silicon Type: SiC MOSFET
  • Package: SP6C

    • Description

    •   SiC Power MOSFET

    •   Kelvin source for easy drive

    •   Low stray inductance

    •   High efficiency converter

    •   Outstanding performance at high frequency operation

    •   Stable temperature behavior

    •   Direct mounting to heatsink (isolated package)

    •   Low junction to case thermal resistance

    •   RoHS Compliant

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