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MSCSM170DUM058AG
  • MSCSM170DUM058AG

MSCSM170DUM058AG

In Production

• SiC Power MOSFET- Low RDS(on)- High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM170DUM058AG Product Info

16 April 2026 2

Parameters

Configuration

Dual common source

Silicon Type

SiC MOSFET

VDSS (V)

1700

Current A (ampere)

281

RDSon (mΩ) typ

5.8

Total Gate Charge (nC)

1068

Rise Time tR ns (nanosecond)

75

Fall Time tF ns (nanosecond)

56

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • • Configuration: Dual Common Source
  • • VDSS (V): 1700
  • • RDSon (mR) typ: 5.8
  • • Current (A) Tc=80C: 281
  • • Silicon Type: SiC MOSFET
  • • Package Type: SP6C

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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