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MSCSM170AM058CD3AG
  • MSCSM170AM058CD3AG

MSCSM170AM058CD3AG

In Production

•    SiC Power MOSFET •    Kelvin source for easy drive •    Low stray inductance •    High efficiency converter •    Outstanding performance at high frequency operation •    Stable temperature behavior •    Direct mounting to heatsink (isolated package) •    Low junction to case thermal resistance •    RoHS Compliant...

Microchip Technology MSCSM170AM058CD3AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

Driver Type

SiC MOSFET

VDSS (V)

1700

Current A (ampere)

281

RDSon (mΩ) typ

5.8

Total Gate Charge (nC)

1068

Rise Time tR ns (nanosecond)

75

Fall Time tF ns (nanosecond)

56

MaxOperatingJunctionTemp

175

PKG

D3

Features

  • Phase Leg
  • VDSS (V):1700
  • RDSon (mR) typ: 5.8
  • Current (A) Tc=80C: 281
  • Silicon Type: SiC MOSFET
  • Package: D3
  • Description

    •    SiC Power MOSFET
    •    Kelvin source for easy drive
    •    Low stray inductance
    •    High efficiency converter
    •    Outstanding performance at high frequency operation
    •    Stable temperature behavior
    •    Direct mounting to heatsink (isolated package)
    •    Low junction to case thermal resistance
    •    RoHS Compliant

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