0
In Production
Configuration |
Phase Leg |
Silicon Type |
SiC MOSFET |
Driver Type |
SiC MOSFET |
VDSS (V) |
1700 |
Current A (ampere) |
281 |
RDSon (mΩ) typ |
5.8 |
Total Gate Charge (nC) |
1068 |
Rise Time tR ns (nanosecond) |
75 |
Fall Time tF ns (nanosecond) |
56 |
MaxOperatingJunctionTemp |
175 |
PKG |
D3 |
• SiC Power MOSFET
• Kelvin source for easy drive
• Low stray inductance
• High efficiency converter
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant