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MSCSM170AM039CT6AG
  • MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

In Production

• SiC Power MOSFET • Kelvin source for easy drive • Low stray inductance • Internal thermistor for temperature monitoring • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant

Microchip Technology MSCSM170AM039CT6AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1700

Current A (ampere)

416

RDSon (mΩ) typ

3.9

Total Gate Charge (nC)

1602

Rise Time tR ns (nanosecond)

75

Fall Time tF ns (nanosecond)

56

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • Phase Leg
  • VDSS (V): 1700
  • RDSon (mR) typ: 3.9
  • Current (A) Tc=80C: 416
  • Silicon Type: SiC MOSFET
  • Package: SP6C

    • Description

    • SiC Power MOSFET

    • Kelvin source for easy drive

    • Low stray inductance

    • Internal thermistor for temperature monitoring

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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