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MSCSM120VR1M31C1AG
  • MSCSM120VR1M31C1AG

MSCSM120VR1M31C1AG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant

Microchip Technology MSCSM120VR1M31C1AG Product Info

16 April 2026 0

Parameters

Configuration

Vienna Rectifier

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

71

RDSon (mΩ) typ

25

Total Gate Charge (nC)

232

Rise Time tR ns (nanosecond)

30

Fall Time tF ns (nanosecond)

25

MaxOperatingJunctionTemp

175

PKG

SP1F

Features

  • Configuration: Vienna Rectifier
  • VDSS (V): 1200
  • RDSon (mR) typ: 25
  • Current (A) Tc=80C: 71
  • Silicon Type: SiC MOSFET
  • Package Type: SP1F

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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