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MSCSM120VR1M16CTPAG
  • MSCSM120VR1M16CTPAG

MSCSM120VR1M16CTPAG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Internal thermistor for temperature monitoring • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant ...

Microchip Technology MSCSM120VR1M16CTPAG Product Info

16 April 2026 0

Parameters

Configuration

Triple Vienna Rectifier

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

136

RDSon (mΩ) typ

12.5

Total Gate Charge (nC)

464

Rise Time tR ns (nanosecond)

30

Fall Time tF ns (nanosecond)

25

MaxOperatingJunctionTemp

175

PKG

SP6P

Features

  • • Configuration: Triple Vienna Rectifier
  • • VDSS (V): 1200
  • • RDSon (mR) typ:12.5
  • • Current (A) Tc=80C: 136
  • • Silicon Type: SiC MOSFET
  • • Package Type: SP6P

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Internal thermistor for temperature monitoring

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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