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MSCSM120TAM11TPAG
  • MSCSM120TAM11TPAG

MSCSM120TAM11TPAG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM120TAM11TPAG Product Info

16 April 2026 0

Parameters

Configuration

Triple Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

200

RDSon (mΩ) typ

8.4

Total Gate Charge (nC)

696

Rise Time tR ns (nanosecond)

30

Fall Time tF ns (nanosecond)

25

MaxOperatingJunctionTemp

175

PKG

SP6P

Features

  • Configuration: Triple Phase Leg
  • VDSS (V): 1200
  • RDSon (mR) typ: 8.4
  • Current (A) Tc=80°C: 200
  • Silicon Type: SiC MOSFET
  • Package type: SP6P

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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