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MSCSM120TAM11CTPAG
  • MSCSM120TAM11CTPAG

MSCSM120TAM11CTPAG

In Production

SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow stray inductanceInternal thermistor for temperature monitoring (optional)High efficiency converterOutstanding performance at high frequency operationStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

Microchip Technology MSCSM120TAM11CTPAG Product Info

16 April 2026 0

Parameters

Configuration

Triple Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

200

RDSon (mΩ) typ

8.4

Total Gate Charge (nC)

696

Rise Time tR ns (nanosecond)

30

Fall Time tF ns (nanosecond)

25

MaxOperatingJunctionTemp

175

PKG

SP6P

Features

  • Triple Phase Leg
  • VDSS (V): 1200
  • RDSon (mR) typ: 8.33
  • Current (A) Tc=80C: 200
  • Silicon Type: SiC MOSFET
  • Package: SP6P

    • Description

    • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
    • Kelvin source for easy drive
    • Low stray inductance
    • Internal thermistor for temperature monitoring (optional)
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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