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MSCSM120HRM052NG
  • MSCSM120HRM052NG

MSCSM120HRM052NG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant

Microchip Technology MSCSM120HRM052NG Product Info

16 April 2026 0

Parameters

Configuration

T-type

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

376

RDSon (mΩ) typ

4.2

Total Gate Charge (nC)

1392

Rise Time tR ns (nanosecond)

55

Fall Time tF ns (nanosecond)

67

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • • Configuration: T-type
  • • VDSS (V): 1200
  • • RDSon (mR) typ: 4.2
  • • Current (A) Tc=80C: 376
  • • Silicon Type: SiC MOSFET
  • • Package Type: SP6C

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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