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MSCSM120HM31T3AG
  • MSCSM120HM31T3AG

MSCSM120HM31T3AG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM120HM31T3AG Product Info

16 April 2026 0

Parameters

Configuration

Full Bridge

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

71

RDSon (mΩ) typ

25

PKG

SP3F

Total Gate Charge (nC)

232

Rise Time tR ns (nanosecond)

30

Fall Time tF ns (nanosecond)

25

MaxOperatingJunctionTemp

175

Features

  • Configuration: Full Bridge
  • VDSS (V): 1200
  • RDSon (mR) typ: 25
  • Current (A) Tc=80°C: 71
  • Silicon Type: SiC MOSFET
  • Package Type: SP3F

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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