0
In Production
Configuration |
Full Bridge |
Silicon Type |
SiC MOSFET |
VDSS (V) |
1200 |
Current A (ampere) |
138 |
RDSon (mΩ) typ |
12.5 |
Total Gate Charge (nC) |
464 |
Rise Time tR ns (nanosecond) |
30 |
Fall Time tF ns (nanosecond) |
25 |
MaxOperatingJunctionTemp |
175 |
PKG |
SP3F |
SiC Power MOSFET
Low RDS(on)
High temperature performance
Kelvin source for easy drive
Low stray inductance
Internal thermistor for temperature monitoring (optional)
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
