0
In Production
Configuration |
Full Bridge |
Silicon Type |
SiC MOSFET |
VDSS (V) |
1200 |
Current A (ampere) |
265 |
RDSon (mΩ) typ |
6.3 |
Total Gate Charge (nC) |
928 |
Rise Time tR ns (nanosecond) |
50 |
Fall Time tF ns (nanosecond) |
30 |
MaxOperatingJunctionTemp |
175 |
PKG |
SP6C |
• SiC Power MOSFET
• Kelvin source for easy drive
• Low stray inductance
• High efficiency converter
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
