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MSCSM120DAM11CT3AG
  • MSCSM120DAM11CT3AG

MSCSM120DAM11CT3AG

In Production

SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow stray inductanceInternal thermistor for temperature monitoring (optional)High efficiency converterOutstanding performance at high frequency operationStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

Microchip Technology MSCSM120DAM11CT3AG Product Info

16 April 2026 0

Parameters

Configuration

Boost Chopper

Silicon Type

SiC MOSFET

VDSS (V)

1200

RDSon (mΩ) typ

11

Current A (ampere)

202

Total Gate Charge (nC)

696

Rise Time tR ns (nanosecond)

30

Fall Time tF ns (nanosecond)

25

PKG

SP3F

MaxOperatingJunctionTemp

175

Features

  • Configuration: Boost Chopper
  • VDSS (V): 1200
  • RDSon (mR) typ: 11
  • Current (A) Tc=80C: 202
  • Silicon Type: SiC MOSFET
  • Package: SP3F

    • Description

    • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
    • Kelvin source for easy drive
    • Low stray inductance
    • Internal thermistor for temperature monitoring (optional)
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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