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MSCSM120AM042CT6LIAG
  • MSCSM120AM042CT6LIAG

MSCSM120AM042CT6LIAG

In Production

SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow stray inductanceInternal thermistor for temperature monitoring (optional)High efficiency converterOutstanding performance at high frequency operationStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

Microchip Technology MSCSM120AM042CT6LIAG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

394

RDSon (mΩ) typ

4.2

Total Gate Charge (nC)

1392

Rise Time tR ns (nanosecond)

55

Fall Time tF ns (nanosecond)

67

MaxOperatingJunctionTemp

175

PKG

SP6LI

Features

  • Phase Leg
  • VDSS (V): 1200
  • RDSon (mR) typ: 4.2
  • Current (A) Tc=80C: 394
  • Silicon Type: SiC MOSFET
  • Package: SP6LI

    • Description

    • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
    • Kelvin source for easy drive
    • Low stray inductance
    • Internal thermistor for temperature monitoring (optional)
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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